Crescimento e caracterização de WS2 dopado com nióbio

Abstract

Monolayers of transition metal dichalcogenides (TMDCs), specifically in the 2H phase, have emerged as promising semiconductors for opto-valleytronic and opto-spintronic applications due to their strong spin-valley coupling. In recent years, defect engineering has become an attractive route to enhance the properties of these materials. Several approaches have been developed for the in situ incorporation of substitutional dopants during growth, such as chemical vapor deposition (CVD) with solid precursors. The concentration of substitutional dopants (e.g., iron or niobium) in TMDCs can be tuned by adjusting the amount of dopant precursors, leading to dopant concentration-dependent optical, electrical, and magnetic properties. The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving the desired physicochemical properties. In this study, we employed CVD to grow monolayers of niobium-doped tungsten disulfide (WS2). Different Nb concentrations were introduced into the growth environment by varying the concentrations of tungsten and niobium oxides in the synthesis precursor. The growth was thoroughly characterized using techniques such as photoluminescence (PL) spectroscopy and Raman spectroscopy. Our investigation focuses on understanding the impact of niobium doping on the optical and structural properties of WS2, providing valuable insights for the development of advanced materials in the field of 2D semiconductors and their applications.